All MOSFET. PSMN8R0-40BS Datasheet

 

PSMN8R0-40BS Datasheet and Replacement


   Type Designator: PSMN8R0-40BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 77 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: D2PAK
 

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PSMN8R0-40BS Datasheet (PDF)

 ..1. Size:227K  nxp
psmn8r0-40bs.pdf pdf_icon

PSMN8R0-40BS

PSMN8R0-40BSN-channel 40 V 7.6 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 4.1. Size:219K  philips
psmn8r0-40ps.pdf pdf_icon

PSMN8R0-40BS

PSMN8R0-40PSN-channel 40 V 7.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 6.1. Size:731K  nxp
psmn8r0-80yl.pdf pdf_icon

PSMN8R0-40BS

PSMN8R0-80YLN-channel 80 V, 8 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon an

 8.1. Size:212K  philips
psmn8r3-40ys.pdf pdf_icon

PSMN8R0-40BS

PSMN8R3-40YSN-channel LFPAK 40 V 8.6 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

Datasheet: PSMN7R5-30MLD , PSMN7R5-30YLD , PSMN7R6-100BSE , PSMN7R6-60BS , PSMN7R6-60XS , PSMN7R8-100PSE , PSMN7R8-120ES , PSMN7R8-120PS , TK10A60D , PSMN8R5-100ES , PSMN8R5-100PS , PSMN8R5-100XS , PSMN8R5-108ES , PSMN8R7-80BS , PSMN9R0-25MLC , PSMN9R5-100BS , PSMN9R8-30MLC .

History: SWB090R08ET | HPD180PNE1DTA | IRHNA57260 | NDP606A | FQPF2N50 | DATP057N06N | UTM3023

Keywords - PSMN8R0-40BS MOSFET datasheet

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