All MOSFET. PSMN8R0-40BS Datasheet

 

PSMN8R0-40BS MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN8R0-40BS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 86 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 77 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 4.7 nS

Drain-Source Capacitance (Cd): 327 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0076 Ohm

Package: D2PAK

PSMN8R0-40BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PSMN8R0-40BS Datasheet (PDF)

1.1. psmn8r0-40bs.pdf Size:227K _update_mosfet

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R0-40BS N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

1.2. psmn8r0-40ps.pdf Size:219K _philips2

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R0-40PS N-channel 40 V 7.6 m? standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switch

 4.1. psmn8r5-108es.pdf Size:231K _update_mosfet

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R5-108ES N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

4.2. psmn8r5-100xs.pdf Size:228K _update_mosfet

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Hi

 4.3. psmn8r5-100ps.pdf Size:250K _update_mosfet

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and co

4.4. psmn8r7-80bs.pdf Size:225K _update_mosfet

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R7-80BS N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

 4.5. psmn8r5-100es.pdf Size:220K _update_mosfet

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R5-100ES N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due t

4.6. psmn8r2-80ys.pdf Size:216K _philips2

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides

4.7. psmn8r7-80ps.pdf Size:216K _philips2

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R7-80PS N-channel 80 V 8.7 m? standard level MOSFET in TO-220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

4.8. psmn8r5-60ys.pdf Size:241K _philips2

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R5-60YS N-channel LFPAK 60 V, 8 m? standard level MOSFET Rev. 01 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

4.9. psmn8r3-40ys.pdf Size:212K _philips2

PSMN8R0-40BS
PSMN8R0-40BS

PSMN8R3-40YS N-channel LFPAK 40 V 8.6 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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