PSMNR90-30BL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMNR90-30BL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 306 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 213 nS
Cossⓘ - Capacitancia de salida: 2799 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
Encapsulados: D2PAK
📄📄 Copiar
Búsqueda de reemplazo de PSMNR90-30BL MOSFET
- Selecciónⓘ de transistores por parámetros
PSMNR90-30BL datasheet
psmnr90-30bl.pdf
PSMNR90-30BL N-channel 30 V 1.0 m logic level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
psmnr90-40ylh.pdf
PSMNR90-40YLH N-channel 40 V, 0.94 m , 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 26 April 2019 Product data sheet 1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance po
psmnr90-40ssh.pdf
PSMNR90-40SSH N-channel 40 V, 0.9 m , 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 19 June 2019 Product data sheet 1. General description 375 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and
psmnr70-40ssh.pdf
PSMNR70-40SSH N-channel 40 V, 0.7 m , 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 19 June 2019 Product data sheet 1. General description 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and
Otros transistores... PSMN8R5-100ES, PSMN8R5-100PS, PSMN8R5-100XS, PSMN8R5-108ES, PSMN8R7-80BS, PSMN9R0-25MLC, PSMN9R5-100BS, PSMN9R8-30MLC, CS150N03A8, XP151A11B0MR-G, XP151A12A2MR-G, XP151A13A0MR-G, XP152A11E5MR-G, XP152A12C0MR-G, XP161, XP161A11A1PR-G, XP161A1265PR-G
Parámetros del MOSFET. Cómo se afectan entre sí.
History: APT6015LVFRG | SI7469DP | MTP5N05 | JMSH1506ASQ | APT6035BVFRG | SIHFIBC40G | INK0102AM1
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b
