All MOSFET. PSMNR90-30BL Datasheet

 

PSMNR90-30BL MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMNR90-30BL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 306 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 243 nC

Rise Time (tr): 213 nS

Drain-Source Capacitance (Cd): 2799 pF

Maximum Drain-Source On-State Resistance (Rds): 0.001 Ohm

Package: D2PAK

PSMNR90-30BL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMNR90-30BL Datasheet (PDF)

1.1. psmnr90-30bl.pdf Size:231K _update_mosfet

PSMNR90-30BL
PSMNR90-30BL

PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK Rev. 2 — 29 February 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency

Datasheet: PHB129NQ04LT , PHB143NQ04T , PHB145NQ06T , PHB146NQ06LT , PHB152NQ03LTA , PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT , IRF3205 , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT .

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