PSMNR90-30BL - описание и поиск аналогов

PSMNR90-30BL N-channel 30 V 1.0 m logic level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

PSMNR90-40YLH N-channel 40 V, 0.94 m , 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 26 April 2019 Product data sheet 1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance po

PSMNR90-40SSH N-channel 40 V, 0.9 m , 375 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 19 June 2019 Product data sheet 1. General description 375 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and

PSMNR70-40SSH N-channel 40 V, 0.7 m , 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 19 June 2019 Product data sheet 1. General description 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and

PSMNR60-25YLH N-channel 25 V, 0.7 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A, optimized for DC load switch and hot-swap a

PSMNR70-30YLH N-channel 30 V, 0.82 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap ap