2SK1029 Todos los transistores

 

2SK1029 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1029
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET 2SK1029

 

2SK1029 Datasheet (PDF)

 ..1. Size:132K  no
2sk1029.pdf

2SK1029
2SK1029

 ..2. Size:257K  inchange semiconductor
2sk1029.pdf

2SK1029
2SK1029

isc N-Channel MOSFET Transistor 2SK1029FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:160K  fuji
2sk1024-01.pdf

2SK1029
2SK1029

 8.2. Size:57K  fuji
2sk1021.pdf

2SK1029

2SK1021

 8.3. Size:166K  fuji
2sk1023-01.pdf

2SK1029
2SK1029

 8.4. Size:200K  inchange semiconductor
2sk1023.pdf

2SK1029
2SK1029

isc N-Channel MOSFET Transistor 2SK1023DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.5. Size:60K  inchange semiconductor
2sk1022.pdf

2SK1029
2SK1029

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GSV Gat

 8.6. Size:223K  inchange semiconductor
2sk1020.pdf

2SK1029
2SK1029

isc N-Channel MOSFET Transistor 2SK1020DESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol

 8.7. Size:200K  inchange semiconductor
2sk1024.pdf

2SK1029
2SK1029

isc N-Channel MOSFET Transistor 2SK1024DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

 8.8. Size:200K  inchange semiconductor
2sk1021.pdf

2SK1029
2SK1029

isc N-Channel MOSFET Transistor 2SK1021DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta

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