2SK1029 Specs and Replacement
Type Designator: 2SK1029
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 10 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3P
- MOSFET ⓘ Cross-Reference Search
2SK1029 datasheet
..2. Size:257K inchange semiconductor
2sk1029.pdf 
isc N-Channel MOSFET Transistor 2SK1029 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
8.4. Size:200K inchange semiconductor
2sk1023.pdf
isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain... See More ⇒
8.5. Size:60K inchange semiconductor
2sk1022.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat... See More ⇒
8.6. Size:223K inchange semiconductor
2sk1020.pdf
isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
8.7. Size:200K inchange semiconductor
2sk1024.pdf
isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒
8.8. Size:200K inchange semiconductor
2sk1021.pdf
isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒
Detailed specifications: XP161A11A1PR-G, XP161A1265PR-G, XP161A1355PR-G, XP162A11C0PR-G, XP162A12A6PR-G, XP202A0003MR-G, XP202A0003PR-G, YTF830, AO3407, 2SK1197, 2SK1297, MMN400A006U1, MMN400A010U1, MMN600DB012B, MMN600DB015B, MMN668A010U1, FTP03N06NA
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
