HD2312 Todos los transistores

 

HD2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HD2312
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20(max) nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0318 Ohm
   Paquete / Cubierta: SOT23
 

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HD2312 Datasheet (PDF)

 ..1. Size:2289K  high diode
hd2312.pdf pdf_icon

HD2312

HD2312SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 2331.8m@4.5VD35.6m@2.5V20V5A41.4m@1.8VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications DC/DC Converters Load Switching for Portable Applications Marking: S12Symbol Unit Par

 9.1. Size:146K  sensitron
shd231009.pdf pdf_icon

HD2312

SHD231009 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES: 30 V, 75 , 30 mA P-Channel JFET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE ID = 1A, VDS = 0V VGS - - 30 V

 9.2. Size:32K  sensitron
shd231006.pdf pdf_icon

HD2312

SENSITRON SHD231006 SEMICONDUCTORTECHNICAL DATA DATA SHEET 4322, REV. A HERMETIC POWER MOSFET N-CHANNEL SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet FEATURES: 60 Volt, 3.0 Ohm, 0.25 A MOSFET Isolated Hermetic, Ceramic Package Fast Switching Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPEC

 9.3. Size:160K  sensitron
shd231008.pdf pdf_icon

HD2312

SHD231008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4302, REV - HERMETIC DEPLETION MODE DMOS N-CHANNEL FEATURES: 250 V, 6 , 300 mA DMOS N-Channel FET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 2

Otros transistores... HX3401 , HX3401A , HX3415 , HX3415A , HD2302 , HD2305 , HD2307 , HD2310 , MMD60R360PRH , SVD3205F , SVD3205S , SVD501DEAG , SVD50N06T , SVD50N06D , SVD50N06M , SVD50N06MJ , SVD540T .

History: P4004ED | LNND04R120 | SSM6K06FU

 

 
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