HD2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HD2312
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20(max) nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0318 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de HD2312 MOSFET
HD2312 Datasheet (PDF)
hd2312.pdf

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shd231009.pdf

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shd231006.pdf

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shd231008.pdf

SHD231008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4302, REV - HERMETIC DEPLETION MODE DMOS N-CHANNEL FEATURES: 250 V, 6 , 300 mA DMOS N-Channel FET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 2
Otros transistores... HX3401 , HX3401A , HX3415 , HX3415A , HD2302 , HD2305 , HD2307 , HD2310 , MMD60R360PRH , SVD3205F , SVD3205S , SVD501DEAG , SVD50N06T , SVD50N06D , SVD50N06M , SVD50N06MJ , SVD540T .
History: P4004ED | LNND04R120 | SSM6K06FU
History: P4004ED | LNND04R120 | SSM6K06FU



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