HD2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HD2312
   Código: S12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 20(max) nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0318 Ohm
   Paquete / Cubierta: SOT23

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HD2312 Datasheet (PDF)

..1. Size:2289K high diode
hd2312.pdf

HD2312SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 2331.8m@4.5VD35.6m@2.5V20V5A41.4m@1.8VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications DC/DC Converters Load Switching for Portable Applications Marking: S12Symbol Unit Par

9.1. Size:146K sensitron
shd231009.pdf

SHD231009 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES: 30 V, 75 , 30 mA P-Channel JFET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE ID = 1A, VDS = 0V VGS - - 30 V

9.2. Size:32K sensitron
shd231006.pdf

SENSITRON SHD231006 SEMICONDUCTORTECHNICAL DATA DATA SHEET 4322, REV. A HERMETIC POWER MOSFET N-CHANNEL SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet FEATURES: 60 Volt, 3.0 Ohm, 0.25 A MOSFET Isolated Hermetic, Ceramic Package Fast Switching Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPEC

9.3. Size:160K sensitron
shd231008.pdf

SHD231008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4302, REV - HERMETIC DEPLETION MODE DMOS N-CHANNEL FEATURES: 250 V, 6 , 300 mA DMOS N-Channel FET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 2

9.4. Size:3841K high diode
hd2310.pdf

HD2310SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 23105m@10VD60V3A125m@4.5VSFeatures High power and current handing capability G Lead free product is acquired Surface mount package Applications DC/DC Converters Battery SwitchMarking: S10Parameter Symbol Va

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