HD2312 MOSFET. Datasheet pdf. Equivalent
Type Designator: HD2312
Marking Code: S12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20(max) nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0318 Ohm
Package: SOT23
HD2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HD2312 Datasheet (PDF)
hd2312.pdf
HD2312SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryPID V(BR)DSS RDS(on)MAX SOT- 2331.8m@4.5VD35.6m@2.5V20V5A41.4m@1.8VSFeatures TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications DC/DC Converters Load Switching for Portable Applications Marking: S12Symbol Unit Par
shd231009.pdf
SHD231009 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES: 30 V, 75 , 30 mA P-Channel JFET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE ID = 1A, VDS = 0V VGS - - 30 V
shd231006.pdf
SENSITRON SHD231006 SEMICONDUCTORTECHNICAL DATA DATA SHEET 4322, REV. A HERMETIC POWER MOSFET N-CHANNEL SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet FEATURES: 60 Volt, 3.0 Ohm, 0.25 A MOSFET Isolated Hermetic, Ceramic Package Fast Switching Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPEC
shd231008.pdf
SHD231008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4302, REV - HERMETIC DEPLETION MODE DMOS N-CHANNEL FEATURES: 250 V, 6 , 300 mA DMOS N-Channel FET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 2
hd2310.pdf
HD2310SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 23105m@10VD60V3A125m@4.5VSFeatures High power and current handing capability G Lead free product is acquired Surface mount package Applications DC/DC Converters Battery SwitchMarking: S10Parameter Symbol Va
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918