HD2312 - описание и поиск аналогов

HD2312 SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct Summary P ID V(BR)DSS RDS(on)MAX SOT- 23 31.8m @4.5V D 35.6m @2.5V 20 V 5A 41.4m @1.8V S Features TrenchFET Power MOSFET G Excellent RDS(on) and Low Gate Charge Applications DC/DC Converters Load Switching for Portable Applications Marking S12 Symbol Unit Par

SHD231009 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES 30 V, 75 , 30 mA P-Channel JFET Hermetically Sealed Surface Mount Package Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE ID = 1 A, VDS = 0V VGS - - 30 V

SENSITRON SHD231006 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4322, REV. A HERMETIC POWER MOSFET N-CHANNEL SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet FEATURES 60 Volt, 3.0 Ohm, 0.25 A MOSFET Isolated Hermetic, Ceramic Package Fast Switching Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPEC

SHD231008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4302, REV - HERMETIC DEPLETION MODE DMOS N-CHANNEL FEATURES 250 V, 6 , 300 mA DMOS N-Channel FET Hermetically Sealed Surface Mount Package Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 2

HD2310 SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct Summary P ID V(BR)DSS RDS(on)MAX SOT- 23 105m @10V D 60 V 3A 125m @4.5V S Features High power and current handing capability G Lead free product is acquired Surface mount package Applications DC/DC Converters Battery Switch Marking S10 Parameter Symbol Va