SVF10N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SVF10N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 19.38 nC
   trⓘ - Tiempo de subida: 60.4 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET SVF10N60S

SVF10N60S Datasheet (PDF)

..1. Size:301K silan
svf10n60t svf10n60f svf10n60s svf10n60k.pdf

SVF10N60T/F/S/K 10A600V N 2SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3TO-263-2L1

..2. Size:690K silan
svf10n60f svf10n60s svf10n60str svf10n60k.pdf

SVF10N60F/T/S/K 10A600V N SVF10N60F/T/S/K N MOS F-CellTM VDMOS AC-DC

6.1. Size:324K silan
svf10n60cafj.pdf

SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.

6.2. Size:577K silan
svf10n60cfj.pdf

SVF10N60CFJ 10A600V N 2SVF10N60CFJ N MOS F-CellTM VDMOS 13 1. 2. 3.

7.1. Size:601K 1
svf10n65f svf10n65t.pdf

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

7.2. Size:403K silan
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

7.3. Size:290K silan
svf10n65cfj.pdf

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

7.4. Size:361K silan
svf10n65cf svf10n65ck svf10n65cfjh.pdf