SVF10N60S Specs and Replacement
Type Designator: SVF10N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60.4 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO263
SVF10N60S substitution
- MOSFET ⓘ Cross-Reference Search
SVF10N60S datasheet
svf10n60t svf10n60f svf10n60s svf10n60k.pdf
SVF10N60T/F/S/K 10A 600V N 2 SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3 TO-263-2L 1 ... See More ⇒
svf10n60cafj.pdf
SVF10N60CAFJ 10A 600V N 2 SVF10N60CAFJ N MOS F-CellTM VDMOS 1 3 1. 2. ... See More ⇒
Detailed specifications: SVD540K, SVD640T, SVD640D, SVD640F, SVD9Z24NT, SVDZ24NT, SVF10N60T, SVF10N60F, IRF640, SVF10N60K, SVF10N80F, SVF10N80K, SVF12N60T, SVF12N60F, SVF12N60S, SVF12N60K, SVF12N65CF
Keywords - SVF10N60S MOSFET specs
SVF10N60S cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: APT10026JLL | 2SK1081-01 | SMF16N65 | SMD4N65 | AOTF4T60P | SVF5N60F | SMF2N65
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