All MOSFET. SVF10N60S Datasheet

 

SVF10N60S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVF10N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.38 nC
   Rise Time (tr): 60.4 nS
   Drain-Source Capacitance (Cd): 135 pF
   Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
   Package: TO263

 SVF10N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVF10N60S Datasheet (PDF)

 ..1. Size:301K  silan
svf10n60t svf10n60f svf10n60s svf10n60k.pdf

SVF10N60S
SVF10N60S

SVF10N60T/F/S/K 10A600V N 2SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3TO-263-2L1

 ..2. Size:690K  silan
svf10n60f svf10n60s svf10n60str svf10n60k.pdf

SVF10N60S
SVF10N60S

SVF10N60F/T/S/K 10A600V N SVF10N60F/T/S/K N MOS F-CellTM VDMOS AC-DC

 6.1. Size:324K  silan
svf10n60cafj.pdf

SVF10N60S
SVF10N60S

SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.

 6.2. Size:577K  silan
svf10n60cfj.pdf

SVF10N60S
SVF10N60S

SVF10N60CFJ 10A600V N 2SVF10N60CFJ N MOS F-CellTM VDMOS 13 1. 2. 3.

 7.1. Size:601K  1
svf10n65f svf10n65t.pdf

SVF10N60S
SVF10N60S

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 7.2. Size:403K  silan
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf

SVF10N60S
SVF10N60S

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

 7.3. Size:290K  silan
svf10n65cfj.pdf

SVF10N60S
SVF10N60S

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

 7.4. Size:361K  silan
svf10n65cf svf10n65ck svf10n65cfjh.pdf

SVF10N60S
SVF10N60S

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.

 7.5. Size:414K  silan
svf10n65ca.pdf

SVF10N60S
SVF10N60S

SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top