SVF10N80K Todos los transistores

 

SVF10N80K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SVF10N80K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 33 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 151 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET SVF10N80K

 

SVF10N80K Datasheet (PDF)

 ..1. Size:567K  silan
svf10n80f svf10n80k.pdf

SVF10N80K
SVF10N80K

SVF10N80F/K 10A800V N 2SVF10N80F/K N MOS F-CellTM VDMOS 13

 8.1. Size:601K  1
svf10n65f svf10n65t.pdf

SVF10N80K
SVF10N80K

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 8.2. Size:324K  silan
svf10n60cafj.pdf

SVF10N80K
SVF10N80K

SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.

 8.3. Size:403K  silan
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf

SVF10N80K
SVF10N80K

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

 8.4. Size:290K  silan
svf10n65cfj.pdf

SVF10N80K
SVF10N80K

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

 8.5. Size:301K  silan
svf10n60t svf10n60f svf10n60s svf10n60k.pdf

SVF10N80K
SVF10N80K

SVF10N60T/F/S/K 10A600V N 2SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3TO-263-2L1

 8.6. Size:690K  silan
svf10n60f svf10n60s svf10n60str svf10n60k.pdf

SVF10N80K
SVF10N80K

SVF10N60F/T/S/K 10A600V N SVF10N60F/T/S/K N MOS F-CellTM VDMOS AC-DC

 8.7. Size:361K  silan
svf10n65cf svf10n65ck svf10n65cfjh.pdf

SVF10N80K
SVF10N80K

SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.

 8.8. Size:414K  silan
svf10n65ca.pdf

SVF10N80K
SVF10N80K

SVF10N65CA 10A650V N 2SVF10N65CA N MOS F-CellTM VDMOS 13

 8.9. Size:577K  silan
svf10n60cfj.pdf

SVF10N80K
SVF10N80K

SVF10N60CFJ 10A600V N 2SVF10N60CFJ N MOS F-CellTM VDMOS 13 1. 2. 3.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


SVF10N80K
  SVF10N80K
  SVF10N80K
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top