SVF10N80K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SVF10N80K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 33 nC
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 151 pF
Resistencia entre drenaje y fuente RDS(on): 1.15 Ohm
Paquete / Cubierta: TO262
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SVF10N80K Datasheet (PDF)
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SVF10N80F/K 10A800V N 2SVF10N80F/K N MOS F-CellTM VDMOS 13
svf10n65f svf10n65t.pdf
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SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf10n60cafj.pdf
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SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.
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SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3
svf10n65cfj.pdf
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SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand
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SVF10N60T/F/S/K 10A600V N 2SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3TO-263-2L1
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SVF10N60F/T/S/K 10A600V N SVF10N60F/T/S/K N MOS F-CellTM VDMOS AC-DC
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SVF10N65CF/K/FJH 10A650V N 2SVF10N65CF/K/FJH N MOS F-CellTM VDMOS 13 1. 2.
svf10n60cfj.pdf
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SVF10N60CFJ 10A600V N 2SVF10N60CFJ N MOS F-CellTM VDMOS 13 1. 2. 3.
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