SVF10N80K Specs and Replacement
Type Designator: SVF10N80K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 151 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO262
SVF10N80K substitution
SVF10N80K Specs
svf10n80f svf10n80k.pdf
SVF10N80F/K 10A 800V N 2 SVF10N80F/K N MOS F-CellTM VDMOS 1 3 ... See More ⇒
svf10n65f svf10n65t.pdf
SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒
svf10n60cafj.pdf
SVF10N60CAFJ 10A 600V N 2 SVF10N60CAFJ N MOS F-CellTM VDMOS 1 3 1. 2. ... See More ⇒
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf
SVF10N65T/F/K/S 10A 650V N 2 SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3 ... See More ⇒
Detailed specifications: SVD640F , SVD9Z24NT , SVDZ24NT , SVF10N60T , SVF10N60F , SVF10N60S , SVF10N60K , SVF10N80F , IRFB4110 , SVF12N60T , SVF12N60F , SVF12N60S , SVF12N60K , SVF12N65CF , SVF12N65CK , SVF12N65CS , SVF12N65CKL .
Keywords - SVF10N80K MOSFET specs
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