All MOSFET. SVF10N80K Datasheet

 

SVF10N80K Datasheet and Replacement


   Type Designator: SVF10N80K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 151 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO262
 

 SVF10N80K substitution

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SVF10N80K Datasheet (PDF)

 ..1. Size:567K  silan
 svf10n80f svf10n80k.pdf pdf_icon

SVF10N80K

SVF10N80F/K 10A800V N 2SVF10N80F/K N MOS F-CellTM VDMOS 13

 8.1. Size:601K  1
 svf10n65f svf10n65t.pdf pdf_icon

SVF10N80K

SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 8.2. Size:324K  silan
 svf10n60cafj.pdf pdf_icon

SVF10N80K

SVF10N60CAFJ 10A600V N 2SVF10N60CAFJ N MOS F-CellTM VDMOS 13 1. 2.

 8.3. Size:403K  silan
 svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf pdf_icon

SVF10N80K

SVF10N65T/F/K/S 10A650V N 2SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3

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Datasheet: SVD640F , SVD9Z24NT , SVDZ24NT , SVF10N60T , SVF10N60F , SVF10N60S , SVF10N60K , SVF10N80F , IRF640N , SVF12N60T , SVF12N60F , SVF12N60S , SVF12N60K , SVF12N65CF , SVF12N65CK , SVF12N65CS , SVF12N65CKL .

History: WFF13N50

Keywords - SVF10N80K MOSFET datasheet

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