SVF2N65N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

7.1. Size:542K silan
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SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

8.1. Size:692K silan
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SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

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SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

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SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1133

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SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

8.5. Size:600K silan
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SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS

8.6. Size:360K silan
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SVF2N60CN/M/F 2A600V N 2SVF2N60CN/M/F N MOS F-CellTM VDMOS 1 31. 2. 3

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SVF2N60CN/NF/M/MJ/F/D 2A600V N 2SVF2N60CN/NF/M/MJ/F/D N MOS 13 F-CellTM VDMOS TO-252-2L13

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SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra

8.9. Size:401K silan
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SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 3

8.10. Size:624K silan
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SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

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