SVF2N65N Datasheet and Replacement
Type Designator: SVF2N65N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 34.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO126
SVF2N65N substitution
SVF2N65N Datasheet (PDF)
svf2n65f svf2n65n svf2n65mj svf2n65d.pdf
SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS
svf2n65f.pdf
SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf
SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L
svf2n60nf svf2n60f.pdf
SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3
Datasheet: SVF2N60CF , SVF2N60CD , SVF2N60MJ , SVF2N60N , SVF2N60NF , SVF2N60RD , SVF2N60RM , SVF2N60RMJ , IRFP250 , SVF2N65MJ , SVF2N65D , SVF2N70M , SVF2N70MJ , SVF2N70F , SVF2N70D , SVF2N70NF , TSM1N45CW .
History: 2SK3365-Z | IPC100N04S5L-1R9
Keywords - SVF2N65N MOSFET datasheet
SVF2N65N cross reference
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SVF2N65N replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK3365-Z | IPC100N04S5L-1R9
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