TSM1N60SCT Todos los transistores

 

TSM1N60SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM1N60SCT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 13 Ohm
   Paquete / Cubierta: TO-92
 

 Búsqueda de reemplazo de TSM1N60SCT MOSFET

   - Selección ⓘ de transistores por parámetros

 

TSM1N60SCT Datasheet (PDF)

 ..1. Size:366K  taiwansemi
 tsm1n60sct.pdf pdf_icon

TSM1N60SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 6.1. Size:368K  taiwansemi
 tsm1n60s a07.pdf pdf_icon

TSM1N60SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 7.1. Size:403K  taiwansemi
 tsm1n60l a07.pdf pdf_icon

TSM1N60SCT

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)() ID (A) Pin Definition: 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

 7.2. Size:303K  taiwansemi
 tsm1n60lch tsm1n60lcp.pdf pdf_icon

TSM1N60SCT

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

MOSTRAR MÁS

Otros transistores... SVF2N70F , SVF2N70D , SVF2N70NF , TSM1N45CW , TSM1N45DCS , TSM1N50CT , TSM1N60LCH , TSM1N60LCP , 8N60 , TSM1N80CW , TSM1N80SCT , TSM1NB60CH , TSM1NB60CP , TSM1NB60CW , TSM1NB60SCT , TSM20N50CI , TSM20N50CZ .

History: NVMFD5C668NL | BUK7K18-40E | TSF7N80M | APT10026L2FLLG | PJD1NA80 | IRFR9120N

 

 
Back to Top

 


 
.