TSM1N60SCT Specs and Replacement

Type Designator: TSM1N60SCT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm

Package: TO-92

TSM1N60SCT substitution

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TSM1N60SCT datasheet

 ..1. Size:366K  taiwansemi
 tsm1n60sct.pdf pdf_icon

TSM1N60SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand ... See More ⇒

 6.1. Size:368K  taiwansemi
 tsm1n60s a07.pdf pdf_icon

TSM1N60SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand ... See More ⇒

 7.1. Size:403K  taiwansemi
 tsm1n60l a07.pdf pdf_icon

TSM1N60SCT

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)( ) ID (A) Pin Definition 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs... See More ⇒

 7.2. Size:303K  taiwansemi
 tsm1n60lch tsm1n60lcp.pdf pdf_icon

TSM1N60SCT

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit... See More ⇒

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Detailed specifications: SVF2N70F, SVF2N70D, SVF2N70NF, TSM1N45CW, TSM1N45DCS, TSM1N50CT, TSM1N60LCH, TSM1N60LCP, IRFZ24N, TSM1N80CW, TSM1N80SCT, TSM1NB60CH, TSM1NB60CP, TSM1NB60CW, TSM1NB60SCT, TSM20N50CI, TSM20N50CZ

Keywords - TSM1N60SCT MOSFET specs

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 TSM1N60SCT substitution

 TSM1N60SCT replacement

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