TSM1N60SCT. Аналоги и основные параметры

Наименование производителя: TSM1N60SCT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 20 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 13 Ohm

Тип корпуса: TO-92

Аналог (замена) для TSM1N60SCT

- подборⓘ MOSFET транзистора по параметрам

 

TSM1N60SCT даташит

 ..1. Size:366K  taiwansemi
 tsm1n60sct.pdf pdf_icon

TSM1N60SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 6.1. Size:368K  taiwansemi
 tsm1n60s a07.pdf pdf_icon

TSM1N60SCT

TSM1N60S 600V N-Channel Power MOSFET TO-92 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 600 11 @ VGS =10V 0.3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand

 7.1. Size:403K  taiwansemi
 tsm1n60l a07.pdf pdf_icon

TSM1N60SCT

TSM1N60L 600V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 TO-251 VDS (V) RDS(on)( ) ID (A) Pin Definition 1. Gate 600 12 @ VGS =10V 1 2. Drain 3. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withs

 7.2. Size:303K  taiwansemi
 tsm1n60lch tsm1n60lcp.pdf pdf_icon

TSM1N60SCT

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to wit

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