MTP6N60 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTP6N60 datasheet

..1. Size:153K st
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MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D MTP6N60 600 V

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0.1. Size:156K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6N60E/D Designer's Data Sheet MTP6N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 6.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra

0.2. Size:28K motorola
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TMOS E-FET. MTP6N60E Power Field Effect Transistor ON Semiconductor Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme TMOS POWER FET to provide enhanced voltage blocking capability without degrading 6.0 AMPERES performance over time. In addition, this advanced TMOS E FET is 600 VOLTS designed to withstand

Otros transistores... MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M , MTP3N50E , MTP3N60 , MTP3N60FI , 8N60 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A , NDB410A , NDB5060 , NDB5060L .