MTP6N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MTP6N60 Datasheet (PDF)

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MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V

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0.1. Size:156K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6N60E/DDesigner's Data SheetMTP6N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination6.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

0.2. Size:28K motorola
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TMOS E-FET.MTP6N60EPower Field Effect TransistorON Semiconductor Preferred DeviceNChannel EnhancementMode Silicon GateThis high voltage MOSFET uses an advanced termination schemeTMOS POWER FETto provide enhanced voltageblocking capability without degrading6.0 AMPERESperformance over time. In addition, this advanced TMOS EFET is600 VOLTSdesigned to withstand

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