MTP6N60 Datasheet and Replacement
Type Designator: MTP6N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 16.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 78 nC
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220
MTP6N60 substitution
MTP6N60 Datasheet (PDF)
mtp6n60.pdf
MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V
mtp6n60erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6N60E/DDesigner's Data SheetMTP6N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination6.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
mtp6n60e.pdf
TMOS E-FET.MTP6N60EPower Field Effect TransistorON Semiconductor Preferred DeviceNChannel EnhancementMode Silicon GateThis high voltage MOSFET uses an advanced termination schemeTMOS POWER FETto provide enhanced voltageblocking capability without degrading6.0 AMPERESperformance over time. In addition, this advanced TMOS EFET is600 VOLTSdesigned to withstand
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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