All MOSFET. MTP6N60 Datasheet

 

MTP6N60 Datasheet and Replacement


   Type Designator: MTP6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

 MTP6N60 substitution

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MTP6N60 Datasheet (PDF)

 ..1. Size:153K  st
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MTP6N60

MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V

 ..2. Size:337K  st
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MTP6N60

 0.1. Size:156K  motorola
 mtp6n60erev3.pdf pdf_icon

MTP6N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6N60E/DDesigner's Data SheetMTP6N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination6.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

 0.2. Size:28K  motorola
 mtp6n60e.pdf pdf_icon

MTP6N60

TMOS E-FET.MTP6N60EPower Field Effect TransistorON Semiconductor Preferred DeviceNChannel EnhancementMode Silicon GateThis high voltage MOSFET uses an advanced termination schemeTMOS POWER FETto provide enhanced voltageblocking capability without degrading6.0 AMPERESperformance over time. In addition, this advanced TMOS EFET is600 VOLTSdesigned to withstand

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Datasheet: MTP10N10M , MTP3055E , MTP3055EFI , MTP30N05E , MTP30N08M , MTP3N50E , MTP3N60 , MTP3N60FI , 8N60 , NDB4050 , NDB4050L , NDB4060 , NDB4060L , NDB408A , NDB410A , NDB5060 , NDB5060L .

History: MTP30N08M

Keywords - MTP6N60 MOSFET datasheet

 MTP6N60 cross reference
 MTP6N60 equivalent finder
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