TSM4N90CI Todos los transistores

 

TSM4N90CI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM4N90CI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: ITO-220
 

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TSM4N90CI Datasheet (PDF)

 ..1. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4N90CI

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.1. Size:373K  taiwansemi
 tsm4nd50cp.pdf pdf_icon

TSM4N90CI

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res

 9.2. Size:166K  taiwansemi
 tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4N90CI

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.3. Size:477K  taiwansemi
 tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf pdf_icon

TSM4N90CI

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a

MOSTRAR MÁS

Otros transistores... TSM4946DCS , TSM4953DCS , TSM4N60CH , TSM4N60CI , TSM4N60CP , TSM4N60CZ , TSM4N80CI , TSM4N80CZ , MMIS60R580P , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , TSM4NB60CZ , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ .

History: HAT2139H | AOI600A70R | FDMT80040DC | PSMN9R0-30LL | S-LBSS260DW1T1G | MTP3N95 | 2SJ512

 

 
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