TSM4N90CI - Даташиты. Аналоги. Основные параметры
Наименование производителя: TSM4N90CI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 38.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 80 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
Тип корпуса: ITO-220
Аналог (замена) для TSM4N90CI
TSM4N90CI Datasheet (PDF)
tsm4n90ci tsm4n90cz.pdf

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s
tsm4nd50cp.pdf

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res
tsm4n80ci tsm4n80cz.pdf

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s
tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a
Другие MOSFET... TSM4946DCS , TSM4953DCS , TSM4N60CH , TSM4N60CI , TSM4N60CP , TSM4N60CZ , TSM4N80CI , TSM4N80CZ , MMIS60R580P , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , TSM4NB60CZ , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ .
History: IRLR8103 | 1N60L-TMS2-T
History: IRLR8103 | 1N60L-TMS2-T



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