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TSM4N90CI Spec and Replacement


   Type Designator: TSM4N90CI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: ITO-220

 TSM4N90CI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSM4N90CI Specs

 ..1. Size:395K  taiwansemi
tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4N90CI

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s... See More ⇒

 9.1. Size:373K  taiwansemi
tsm4nd50cp.pdf pdf_icon

TSM4N90CI

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res... See More ⇒

 9.2. Size:166K  taiwansemi
tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4N90CI

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s... See More ⇒

 9.3. Size:477K  taiwansemi
tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf pdf_icon

TSM4N90CI

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)( ) ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a... See More ⇒

Detailed specifications: TSM4946DCS , TSM4953DCS , TSM4N60CH , TSM4N60CI , TSM4N60CP , TSM4N60CZ , TSM4N80CI , TSM4N80CZ , 7N60 , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , TSM4NB60CZ , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ .

History: 2SK1295 | MTP3055VL

Keywords - TSM4N90CI MOSFET specs

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