TSM5NB50CZ Datasheet. Specs and Replacement
Type Designator: TSM5NB50CZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
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TSM5NB50CZ datasheet
tsm5nb50cz.pdf
TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 1.5 @ VGS =10V 4.4 General Description The TSM5NB50 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re... See More ⇒
tsm5nd50ch tsm5nd50cp.pdf
TSM5ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res... See More ⇒
Detailed specifications: TSM4N90CI, TSM4N90CZ, TSM4NB60CH, TSM4NB60CI, TSM4NB60CP, TSM4NB60CZ, TSM4ND50CP, TSM55N03CP, SI2302, TSM5ND50CH, TSM5ND50CP, TSM60N03CP, TSM60N06CP, TSM6866DCA, TSM6866SDCA, TSM6963SDCA, TSM6968DCA
Keywords - TSM5NB50CZ MOSFET specs
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History: APG070N12G
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