TSM5NB50CZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSM5NB50CZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO-220
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TSM5NB50CZ Datasheet (PDF)
tsm5nb50cz.pdf

TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 1.5 @ VGS =10V 4.4 General Description The TSM5NB50 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state re
tsm5nd50ch tsm5nd50cp.pdf

TSM5ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res
Otros transistores... TSM4N90CI , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI , TSM4NB60CP , TSM4NB60CZ , TSM4ND50CP , TSM55N03CP , IRF9640 , TSM5ND50CH , TSM5ND50CP , TSM60N03CP , TSM60N06CP , TSM6866DCA , TSM6866SDCA , TSM6963SDCA , TSM6968DCA .
History: AON6276 | FQPF8N60CT | IRF7820PBF | IRFP240PBF | AP25T03GJ | VBFB1303 | S40N09RP
History: AON6276 | FQPF8N60CT | IRF7820PBF | IRFP240PBF | AP25T03GJ | VBFB1303 | S40N09RP



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