TSM6988DCX6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSM6988DCX6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 210 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT-26

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TSM6988DCX6 Datasheet (PDF)

..1. Size:289K taiwansemi
tsm6988dcx6.pdf

TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2 6. Source 2 2. Drain 5, Drain 35 @ VGS = 4.5V 6.0 20 3. Gate 1 4. Source 1 40 @ VGS = 2.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET A

8.1. Size:240K taiwansemi
tsm6981dca.pdf

TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: PRODUCT SUMMARY 1. Drain 1 8. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Source 1 7. Source 2 3. Source 1 6. Source 2 40 @ VGS = -4.5V -5 4. Gate 1 5. Gate 2 -20 50 @ VGS = -2.5V -4 60 @ VGS = -1.8V -3 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On

9.1. Size:498K taiwansemi
tsm6968sdca.pdf

TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TSSOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 22 @ VGS = 4.5V 6.5 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 29 @ VGS = 2.5V 5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resi

9.2. Size:344K taiwansemi
tsm6963sdca.pdf

TSM6963SD 20V Dual P-Channel MOSFET Pin Definition: TSSOP-8 PRODUCT SUMMARY 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 VDS (V) RDS(on)(m) ID (A) 3. Source 1 6. Source 2 30 @ VGS = -4.5V -4.5 4. Gate 1 5. Gate 2 -20 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V -2 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low

9.3. Size:180K tsc
tsm6968dca.pdf

TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 2. Source 1 VDS = 20V 3. Source 1 RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22m 4. Gate 1 RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29m 5, Gate 2 6. Source 2 7, Source 2 8. Drain Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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