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TSM6988DCX6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TSM6988DCX6
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.25 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 15 nC
   Время нарастания (tr): 210 ns
   Выходная емкость (Cd): 450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
   Тип корпуса: SOT-26

 Аналог (замена) для TSM6988DCX6

 

 

TSM6988DCX6 Datasheet (PDF)

 ..1. Size:289K  taiwansemi
 tsm6988dcx6.pdf

TSM6988DCX6 TSM6988DCX6

TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY SOT-26 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2 6. Source 2 2. Drain 5, Drain 35 @ VGS = 4.5V 6.0 20 3. Gate 1 4. Source 1 40 @ VGS = 2.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET A

 8.1. Size:240K  taiwansemi
 tsm6981dca.pdf

TSM6988DCX6 TSM6988DCX6

TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: PRODUCT SUMMARY 1. Drain 1 8. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Source 1 7. Source 2 3. Source 1 6. Source 2 40 @ VGS = -4.5V -5 4. Gate 1 5. Gate 2 -20 50 @ VGS = -2.5V -4 60 @ VGS = -1.8V -3 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On

 9.1. Size:498K  taiwansemi
 tsm6968sdca.pdf

TSM6988DCX6 TSM6988DCX6

TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TSSOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 22 @ VGS = 4.5V 6.5 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 29 @ VGS = 2.5V 5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resi

 9.2. Size:344K  taiwansemi
 tsm6963sdca.pdf

TSM6988DCX6 TSM6988DCX6

TSM6963SD 20V Dual P-Channel MOSFET Pin Definition: TSSOP-8 PRODUCT SUMMARY 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 VDS (V) RDS(on)(m) ID (A) 3. Source 1 6. Source 2 30 @ VGS = -4.5V -4.5 4. Gate 1 5. Gate 2 -20 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V -2 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low

 9.3. Size:180K  tsc
 tsm6968dca.pdf

TSM6988DCX6 TSM6988DCX6

TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 2. Source 1 VDS = 20V 3. Source 1 RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22m 4. Gate 1 RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29m 5, Gate 2 6. Source 2 7, Source 2 8. Drain Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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