TSM6988DCX6 MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

TSM6988DCX6 Specs and Replacement

Type Designator: TSM6988DCX6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT-26

TSM6988DCX6 substitution

- MOSFET ⓘ Cross-Reference Search

TSM6988DCX6 datasheet

..1. Size:289K taiwansemi
tsm6988dcx6.pdf pdf_icon

TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY SOT-26 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2 6. Source 2 2. Drain 5, Drain 35 @ VGS = 4.5V 6.0 20 3. Gate 1 4. Source 1 40 @ VGS = 2.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET A... See More ⇒

8.1. Size:240K taiwansemi
tsm6981dca.pdf pdf_icon

TSM6981D 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition PRODUCT SUMMARY 1. Drain 1 8. Drain 2 VDS (V) RDS(on)(m ) ID (A) 2. Source 1 7. Source 2 3. Source 1 6. Source 2 40 @ VGS = -4.5V -5 4. Gate 1 5. Gate 2 -20 50 @ VGS = -2.5V -4 60 @ VGS = -1.8V -3 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On... See More ⇒

9.1. Size:498K taiwansemi
tsm6968sdca.pdf pdf_icon

TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY TSSOP-8 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 22 @ VGS = 4.5V 6.5 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 29 @ VGS = 2.5V 5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resi... See More ⇒

9.2. Size:344K taiwansemi
tsm6963sdca.pdf pdf_icon

TSM6963SD 20V Dual P-Channel MOSFET Pin Definition TSSOP-8 PRODUCT SUMMARY 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 VDS (V) RDS(on)(m ) ID (A) 3. Source 1 6. Source 2 30 @ VGS = -4.5V -4.5 4. Gate 1 5. Gate 2 -20 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V -2 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low... See More ⇒