BUK128-50DL Todos los transistores

 

BUK128-50DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK128-50DL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT-404
     - Selección de transistores por parámetros

 

BUK128-50DL Datasheet (PDF)

 ..1. Size:40K  philips
buk128-50dl.pdf pdf_icon

BUK128-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To

 9.1. Size:67K  philips
buk127-50dl 1.pdf pdf_icon

BUK128-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

 9.2. Size:45K  philips
buk127-50gt.pdf pdf_icon

BUK128-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI

 9.3. Size:66K  philips
buk127-50dl.pdf pdf_icon

BUK128-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

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History: SSP65R190S2 | CI47N65 | STV50N05 | SSG4825P | RU60120R | AP4506GEM | AM50N10-14I

 

 
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