BUK128-50DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK128-50DL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SOT-404
- Selección de transistores por parámetros
BUK128-50DL Datasheet (PDF)
buk128-50dl.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To
buk127-50dl 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI
buk127-50gt.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI
buk127-50dl.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SSP65R190S2 | CI47N65 | STV50N05 | SSG4825P | RU60120R | AP4506GEM | AM50N10-14I
History: SSP65R190S2 | CI47N65 | STV50N05 | SSG4825P | RU60120R | AP4506GEM | AM50N10-14I



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