Справочник MOSFET. BUK128-50DL

 

BUK128-50DL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK128-50DL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT-404

 Аналог (замена) для BUK128-50DL

 

 

BUK128-50DL Datasheet (PDF)

 ..1. Size:40K  philips
buk128-50dl.pdf

BUK128-50DL
BUK128-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To

 9.1. Size:67K  philips
buk127-50dl 1.pdf

BUK128-50DL
BUK128-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

 9.2. Size:45K  philips
buk127-50gt.pdf

BUK128-50DL
BUK128-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI

 9.3. Size:66K  philips
buk127-50dl.pdf

BUK128-50DL
BUK128-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI

 9.4. Size:40K  philips
buk129-50dl.pdf

BUK128-50DL
BUK128-50DL

Philips Semiconductors Product specification Logic level TOPFET BUK129-50DL SMD version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD T

 9.5. Size:165K  philips
buk124-50l.pdf

BUK128-50DL
BUK128-50DL

Philips Semiconductors Product Specification Logic level TOPFET BUK124-50L TO-220 version of BUK135-50LDESCRIPTION QUICK REFERENCE DATAMonolithic logic level protected SYMBOL PARAMETER MAX. UNITpower MOSFET using TOPFET2technology assembled in a 5 pin VDS Continuous drain source voltage 50 Vsurface mounting plastic package. ID Continuous drain current 30 APtot Total power dissi

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