BUK128-50DL
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK128-50DL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT-404
BUK128-50DL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK128-50DL
Datasheet (PDF)
..1. Size:40K philips
buk128-50dl.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK128-50DL SMD version of BUK117-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 8 Aplastic package. PD To
9.1. Size:67K philips
buk127-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI
9.2. Size:45K philips
buk127-50gt.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK127-50GT Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 2.1 AAPPLICATI
9.3. Size:66K philips
buk127-50dl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK127-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mountplastic package. ID Continuous drain current 0.7 AAPPLICATI
9.4. Size:40K philips
buk129-50dl.pdf
Philips Semiconductors Product specification Logic level TOPFET BUK129-50DL SMD version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD T
9.5. Size:165K philips
buk124-50l.pdf
Philips Semiconductors Product Specification Logic level TOPFET BUK124-50L TO-220 version of BUK135-50LDESCRIPTION QUICK REFERENCE DATAMonolithic logic level protected SYMBOL PARAMETER MAX. UNITpower MOSFET using TOPFET2technology assembled in a 5 pin VDS Continuous drain source voltage 50 Vsurface mounting plastic package. ID Continuous drain current 30 APtot Total power dissi
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