BUK472-100A Todos los transistores

 

BUK472-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK472-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SOT-186A
     - Selección de transistores por parámetros

 

BUK472-100A Datasheet (PDF)

 ..1. Size:52K  philips
 buk472-100a buk472-100b.pdf pdf_icon

BUK472-100A

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

 0.1. Size:59K  philips
 buk472-100a-b.pdf pdf_icon

BUK472-100A

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

 7.1. Size:57K  philips
 buk472-60a-b 1.pdf pdf_icon

BUK472-100A

Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK472 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies

 9.1. Size:55K  philips
 buk474-60h 1.pdf pdf_icon

BUK472-100A

Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: CSD17309Q3 | IRFR120TR | MRF5003 | 4N65KG-T60-K | AONS36316

 

 
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