Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK472 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies

Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation

Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B Isolated version of BUK455-200A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK475 -200A -200Bdevice is intended foruse in Switched VDS Drain-source voltage 200 200 VMode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK475-60H Isolated version of BUK455-60HGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The device VDS Drain-source voltage 60 Vis intended for use in Automotive ID Drain current (DC) 22.5 Aapplications, Swi

Philips Semiconductors Product specification PowerMOS transistor BUK475-60A/B Isolated version of BUK455-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK475 -60A -60Bdevice is intended foruse in Switched VDS Drain-source voltage 60 60 VMode Power Supplies

Philips Semiconductors Product specification PowerMOS transistor BUK473-100A/B Isolated version of BUK453-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK473 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup

Philips Semiconductors Product specification PowerMOS transistor BUK473-60A/B Isolated version of BUK453-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK473 -60A -60Bdevice is intended foruse in Switched VDS Drain-source voltage 60 60 VMode Power Supplies