BUK472-100A MOSFET Datasheet: N-Ch, 100V, 6.6A. Full specification with pinout and replacement list

BUK472-100A Specs and Replacement

Type Designator: BUK472-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT-186A

BUK472-100A substitution

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BUK472-100A datasheet

..1. Size:52K philips
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Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK472 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup... See More ⇒

0.1. Size:59K philips
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7.1. Size:57K philips
buk472-60a-b 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK472 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies... See More ⇒

9.1. Size:55K philips
buk474-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation ... See More ⇒