BUK472-100A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK472-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT-186A
BUK472-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK472-100A Datasheet (PDF)
buk472-100a buk472-100b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup
buk472-100a-b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup
buk472-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK472 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies
buk474-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation
buk475-200a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B Isolated version of BUK455-200A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK475 -200A -200Bdevice is intended foruse in Switched VDS Drain-source voltage 200 200 VMode Power Sup
buk475-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK475-60H Isolated version of BUK455-60HGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The device VDS Drain-source voltage 60 Vis intended for use in Automotive ID Drain current (DC) 22.5 Aapplications, Swi
buk475-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK475-60A/B Isolated version of BUK455-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK475 -60A -60Bdevice is intended foruse in Switched VDS Drain-source voltage 60 60 VMode Power Supplies
buk473-100a-b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK473-100A/B Isolated version of BUK453-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK473 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup
buk473-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK473-60A/B Isolated version of BUK453-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK473 -60A -60Bdevice is intended foruse in Switched VDS Drain-source voltage 60 60 VMode Power Supplies
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918