BUK543-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK543-100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: SOT-186A

Búsqueda de reemplazo de MOSFET BUK543-100B

BUK543-100B Datasheet (PDF)

..1. Size:63K philips
buk543-100b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.

4.1. Size:58K philips
buk543-100a-b 1.pdf

7.1. Size:56K philips
buk543-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 13 12 ASw

9.1. Size:58K philips
buk542-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK542 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 6.3 5.

9.2. Size:56K philips
buk545-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 13 12

9.3. Size:56K philips
buk545-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -200A -200Benvelope. VDS Drain-source voltage 200 200 VThe device is intended for use in ID Drain current (DC) 7.6 7

9.4. Size:57K philips
buk542-60a-b 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK542-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK542 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 9.2 8.4 A

9.5. Size:71K philips
buk545-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched

9.6. Size:57K philips
buk545-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 20 18 ASw

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: