BUK543-100B Datasheet. Specs and Replacement

Type Designator: BUK543-100B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: SOT-186A

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BUK543-100B datasheet

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BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK543 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 8.3 7.... See More ⇒

 4.1. Size:58K  philips
 buk543-100a-b 1.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK543 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 8.3 7.... See More ⇒

 7.1. Size:56K  philips
 buk543-60a-b 1.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK543 -60A -60B envelope. VDS Drain-source voltage 60 60 V The device is intended for use in ID Drain current (DC) 13 12 A Sw... See More ⇒

 9.1. Size:58K  philips
 buk542-100a-b 1.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK542 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 6.3 5.... See More ⇒

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Detailed specifications: BUK139-50DL, BUK1M200-50SGTD, BUK452-100B, BUK455-100B, BUK455-200B, BUK456-100B, BUK472-100A, BUK472-100B, K4145, BUK553-100B, BUK553-60A, BUK553-60B, BUK555-200B, BUK6207-30C, BUK6208-40C, BUK6240-75C, BUK652R7-30C

Keywords - BUK543-100B MOSFET specs

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