BUK543-100B PDF Specs and Replacement
Type Designator: BUK543-100B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: SOT-186A
BUK543-100B substitution
BUK543-100B PDF Specs
buk543-100b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK543 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 8.3 7.... See More ⇒
buk543-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK543 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 8.3 7.... See More ⇒
buk543-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK543 -60A -60B envelope. VDS Drain-source voltage 60 60 V The device is intended for use in ID Drain current (DC) 13 12 A Sw... See More ⇒
buk542-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK542 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 6.3 5.... See More ⇒
Detailed specifications: BUK139-50DL , BUK1M200-50SGTD , BUK452-100B , BUK455-100B , BUK455-200B , BUK456-100B , BUK472-100A , BUK472-100B , IRF2807 , BUK553-100B , BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C , BUK652R7-30C .
Keywords - BUK543-100B MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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