All MOSFET. BUK543-100B Datasheet

 

BUK543-100B Datasheet and Replacement


   Type Designator: BUK543-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: SOT-186A
 

 BUK543-100B substitution

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BUK543-100B Datasheet (PDF)

 ..1. Size:63K  philips
 buk543-100b.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.

 4.1. Size:58K  philips
 buk543-100a-b 1.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.

 7.1. Size:56K  philips
 buk543-60a-b 1.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 13 12 ASw

 9.1. Size:58K  philips
 buk542-100a-b 1.pdf pdf_icon

BUK543-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK542 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 6.3 5.

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History: AP60U02GH | IPU075N03LG

Keywords - BUK543-100B MOSFET datasheet

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 BUK543-100B equivalent finder
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