BUK543-100B Datasheet and Replacement

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.

Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.

Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 13 12 ASw

Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK542 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 6.3 5.

Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 13 12

Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -200A -200Benvelope. VDS Drain-source voltage 200 200 VThe device is intended for use in ID Drain current (DC) 7.6 7

Philips Semiconductors Product specification PowerMOS transistor BUK542-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK542 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 9.2 8.4 A

Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched

Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 20 18 ASw