BUK6C3R3-75C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK6C3R3-75C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 2.8 V
|Id|ⓘ - Corriente continua de drenaje: 181 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 217 nS
Cossⓘ - Capacitancia de salida: 873 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Paquete / Cubierta: D2PAK
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BUK6C3R3-75C Datasheet (PDF)
buk6c3r3-75c.pdf

BUK6C3R3-75CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
buk6c2r1-55c.pdf

BUK6C2R1-55CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
Otros transistores... BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C , BUK652R7-30C , BUK6C2R1-55C , NCEP15T14 , BUK7213-40A , BUK7505-30A , BUK7514-60E , BUK751R6-30E , BUK751R8-40E , BUK7524-55A , BUK752R3-40E , BUK752R7-60E .
History: WFP630 | SI2334DS | HGP059N12S | HAT1020R | BUK9535-55A | YTF531
History: WFP630 | SI2334DS | HGP059N12S | HAT1020R | BUK9535-55A | YTF531



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