BUK6C3R3-75C Datasheet and Replacement
Type Designator: BUK6C3R3-75C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 2.8 V
|Id| ⓘ - Maximum Drain Current: 181 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 217 nS
Cossⓘ - Output Capacitance: 873 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: D2PAK
BUK6C3R3-75C substitution
BUK6C3R3-75C Datasheet (PDF)
buk6c3r3-75c.pdf

BUK6C3R3-75CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
buk6c2r1-55c.pdf

BUK6C2R1-55CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au
Datasheet: BUK553-60A , BUK553-60B , BUK555-200B , BUK6207-30C , BUK6208-40C , BUK6240-75C , BUK652R7-30C , BUK6C2R1-55C , NCEP15T14 , BUK7213-40A , BUK7505-30A , BUK7514-60E , BUK751R6-30E , BUK751R8-40E , BUK7524-55A , BUK752R3-40E , BUK752R7-60E .
History: AP40T10GI-HF | NCE6012CS | SWP100R10VT | DMT6016LPS | 2SK3355-S | AP4800BGM-HF | DL2M50N5
Keywords - BUK6C3R3-75C MOSFET datasheet
BUK6C3R3-75C cross reference
BUK6C3R3-75C equivalent finder
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BUK6C3R3-75C substitution
BUK6C3R3-75C replacement
History: AP40T10GI-HF | NCE6012CS | SWP100R10VT | DMT6016LPS | 2SK3355-S | AP4800BGM-HF | DL2M50N5



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