BUK6C3R3-75C MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUK6C3R3-75C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 2.8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 181 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 253 nC
   trⓘ - Rise Time: 217 nS
   Cossⓘ - Output Capacitance: 873 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: D2PAK

BUK6C3R3-75C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS