BUK6C3R3-75C MOSFET Datasheet: N-Ch, 75V, 181A. Full specification with pinout and replacement list

BUK6C3R3-75C Specs and Replacement

Type Designator: BUK6C3R3-75C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 2.8 V

|Id| ⓘ - Maximum Drain Current: 181 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 217 nS

Cossⓘ - Output Capacitance: 873 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: D2PAK

BUK6C3R3-75C substitution

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BUK6C3R3-75C datasheet

..1. Size:188K nxp
buk6c3r3-75c.pdf pdf_icon

BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au... See More ⇒

9.1. Size:185K nxp
buk6c2r1-55c.pdf pdf_icon

BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au... See More ⇒

Detailed specifications: BUK553-60A, BUK553-60B, BUK555-200B, BUK6207-30C, BUK6208-40C, BUK6240-75C, BUK652R7-30C, BUK6C2R1-55C, IRF1405, BUK7213-40A, BUK7505-30A, BUK7514-60E, BUK751R6-30E, BUK751R8-40E, BUK7524-55A, BUK752R3-40E, BUK752R7-60E