BUK753R8-80E Todos los transistores

 

BUK753R8-80E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK753R8-80E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 349 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 840 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-220AB

 Búsqueda de reemplazo de BUK753R8-80E MOSFET

- Selecciónⓘ de transistores por parámetros

 

BUK753R8-80E datasheet

 ..1. Size:211K  nxp
buk753r8-80e.pdf pdf_icon

BUK753R8-80E

BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe

 7.1. Size:323K  philips
buk753r1-40b buk763r1-40b.pdf pdf_icon

BUK753R8-80E

BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta

 7.2. Size:108K  philips
buk753r4-30b buk763r4-30b.pdf pdf_icon

BUK753R8-80E

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

 7.3. Size:210K  nxp
buk753r5-60e.pdf pdf_icon

BUK753R8-80E

BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repe

Otros transistores... BUK7514-60E , BUK751R6-30E , BUK751R8-40E , BUK7524-55A , BUK752R3-40E , BUK752R7-60E , BUK753R1-40E , BUK753R5-60E , RU7088R , BUK754R7-60E , BUK755R4-100E , BUK758R3-40E , BUK7605-30A , BUK7613-100E , BUK7613-60E , BUK7614-55 , BUK76150-55A .

History: BSS127 | MDIS5N40TH | MDIS3N40TH

 

 

 

 

↑ Back to Top
.