Справочник MOSFET. BUK753R8-80E

 

BUK753R8-80E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK753R8-80E

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 349 W

Предельно допустимое напряжение сток-исток (Uds): 80 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 169 nC

Время нарастания (tr): 48 ns

Выходная емкость (Cd): 840 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для BUK753R8-80E

 

 

BUK753R8-80E Datasheet (PDF)

1.1. buk753r8-80e.pdf Size:211K _update_mosfet

BUK753R8-80E
BUK753R8-80E

BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

3.1. buk753r1-40e.pdf Size:213K _update_mosfet

BUK753R8-80E
BUK753R8-80E

BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

3.2. buk753r5-60e.pdf Size:210K _update_mosfet

BUK753R8-80E
BUK753R8-80E

BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

 3.3. buk753r4-30b buk763r4-30b.pdf Size:108K _philips

BUK753R8-80E
BUK753R8-80E

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible

3.4. buk753r1-40b buk763r1-40b.pdf Size:323K _philips

BUK753R8-80E
BUK753R8-80E

BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-state resist

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