BUK753R8-80E Datasheet and Replacement
Type Designator: BUK753R8-80E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 840 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220AB
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BUK753R8-80E Datasheet (PDF)
buk753r8-80e.pdf

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buk753r5-60e.pdf

BUK753R5-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TK2P60D | DMP2104LP | IXTA80N10T | IRFBG20
Keywords - BUK753R8-80E MOSFET datasheet
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History: TK2P60D | DMP2104LP | IXTA80N10T | IRFBG20



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