BUK753R8-80E MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK753R8-80E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 349 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 169 nC

Rise Time (tr): 48 nS

Drain-Source Capacitance (Cd): 840 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO-220AB

BUK753R8-80E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK753R8-80E Datasheet (PDF)

1.1. buk753r8-80e.pdf Size:211K _update_mosfet

BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

1.2. buk753r8-80e.pdf Size:211K _nxp

3.1. buk753r1-40e.pdf Size:213K _update_mosfet

BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

3.2. buk753r5-60e.pdf Size:210K _update_mosfet

BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

3.3. buk753r4-30b buk763r4-30b.pdf Size:108K _philips

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 °C rated Standard level compa

3.4. buk753r1-40b buk763r1-40b.pdf Size:323K _philips

BUK75/763R1-40B TrenchMOS™ standard level FET Rev. 02 — 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta

3.5. buk753r1-40e.pdf Size:213K _nxp