BUK763R1-60E Todos los transistores

 

BUK763R1-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK763R1-60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 293 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 114 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 851 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: D2PAK
 

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BUK763R1-60E Datasheet (PDF)

 ..1. Size:207K  nxp
 buk763r1-60e.pdf pdf_icon

BUK763R1-60E

BUK763R1-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 5.1. Size:323K  philips
 buk753r1-40b buk763r1-40b.pdf pdf_icon

BUK763R1-60E

BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta

 5.2. Size:978K  nxp
 buk763r1-40b.pdf pdf_icon

BUK763R1-60E

BUK763R1-40BN-channel TrenchMOS standard level FETRev. 03 8 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

 7.1. Size:104K  philips
 buk763r4-30.pdf pdf_icon

BUK763R1-60E

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

MOSTRAR MÁS

Otros transistores... BUK761R6-40E , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E , BUK762R6-60E , BUK762R9-40E , BUK7631-100E , IRF630 , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , BUK764R0-40E , BUK764R2-80E , BUK764R4-60E , BUK765R0-100E , BUK765R3-40E .

History: PJP10NA80 | BSZ040N04LSG | BUK7Y21-40E

 

 
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