BUK763R1-60E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK763R1-60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 293
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 114
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 851
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031
Ohm
Package:
D2PAK
BUK763R1-60E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK763R1-60E
Datasheet (PDF)
..1. Size:207K nxp
buk763r1-60e.pdf 
BUK763R1-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
5.1. Size:323K philips
buk753r1-40b buk763r1-40b.pdf
BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta
5.2. Size:978K nxp
buk763r1-40b.pdf
BUK763R1-40BN-channel TrenchMOS standard level FETRev. 03 8 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.
7.1. Size:104K philips
buk763r4-30.pdf
BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
7.2. Size:108K philips
buk753r4-30b buk763r4-30b.pdf
BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
7.3. Size:947K nxp
buk763r6-40c.pdf
BUK763R6-40CN-channel TrenchMOS standard level FETRev. 04 16 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
7.4. Size:207K nxp
buk763r9-60e.pdf
BUK763R9-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti
7.5. Size:826K nxp
buk763r4-30b.pdf
BUK763R4-30BN-channel TrenchMOS standard level FETRev. 2 21 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F
7.6. Size:236K nxp
buk763r8-80e.pdf
BUK763R8-80EN-channel TrenchMOS standard level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant
Datasheet: FQT7N10L
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