BUK763R1-60E Specs and Replacement
Type Designator: BUK763R1-60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 293 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 851 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: D2PAK
BUK763R1-60E substitution
- MOSFET ⓘ Cross-Reference Search
BUK763R1-60E datasheet
buk763r1-60e.pdf
BUK763R1-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒
buk753r1-40b buk763r1-40b.pdf
BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta... See More ⇒
buk763r1-40b.pdf
BUK763R1-40B N-channel TrenchMOS standard level FET Rev. 03 8 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒
buk763r4-30.pdf
BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒
Detailed specifications: BUK761R6-40E, BUK761R7-40E, BUK762R0-40E, BUK762R4-60E, BUK762R6-40E, BUK762R6-60E, BUK762R9-40E, BUK7631-100E, IRF640N, BUK763R4-30, BUK763R8-80E, BUK763R9-60E, BUK764R0-40E, BUK764R2-80E, BUK764R4-60E, BUK765R0-100E, BUK765R3-40E
Keywords - BUK763R1-60E MOSFET specs
BUK763R1-60E cross reference
BUK763R1-60E equivalent finder
BUK763R1-60E pdf lookup
BUK763R1-60E substitution
BUK763R1-60E replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FQP16N25
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
2sc372 | 2sd400 datasheet | k2645 | tip3055 equivalent | 3sk73 | 13n10 mosfet | 2n3565 transistor | datasheet irfz44n
