BUK763R1-60E PDF and Equivalents Search

 

BUK763R1-60E Specs and Replacement

Type Designator: BUK763R1-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 293 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 851 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: D2PAK

BUK763R1-60E substitution

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BUK763R1-60E datasheet

 ..1. Size:207K  nxp
buk763r1-60e.pdf pdf_icon

BUK763R1-60E

BUK763R1-60E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒

 5.1. Size:323K  philips
buk753r1-40b buk763r1-40b.pdf pdf_icon

BUK763R1-60E

BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta... See More ⇒

 5.2. Size:978K  nxp
buk763r1-40b.pdf pdf_icon

BUK763R1-60E

BUK763R1-40B N-channel TrenchMOS standard level FET Rev. 03 8 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.... See More ⇒

 7.1. Size:104K  philips
buk763r4-30.pdf pdf_icon

BUK763R1-60E

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa... See More ⇒

Detailed specifications: BUK761R6-40E, BUK761R7-40E, BUK762R0-40E, BUK762R4-60E, BUK762R6-40E, BUK762R6-60E, BUK762R9-40E, BUK7631-100E, IRF640N, BUK763R4-30, BUK763R8-80E, BUK763R9-60E, BUK764R0-40E, BUK764R2-80E, BUK764R4-60E, BUK765R0-100E, BUK765R3-40E

Keywords - BUK763R1-60E MOSFET specs

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