BUK763R1-60E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK763R1-60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 293 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 851 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: D2PAK
BUK763R1-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK763R1-60E Datasheet (PDF)
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