Справочник MOSFET. BUK763R1-60E

 

BUK763R1-60E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK763R1-60E
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 293 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 851 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK763R1-60E

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK763R1-60E Datasheet (PDF)

 ..1. Size:207K  nxp
buk763r1-60e.pdfpdf_icon

BUK763R1-60E

BUK763R1-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 5.1. Size:323K  philips
buk753r1-40b buk763r1-40b.pdfpdf_icon

BUK763R1-60E

BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta

 5.2. Size:978K  nxp
buk763r1-40b.pdfpdf_icon

BUK763R1-60E

BUK763R1-40BN-channel TrenchMOS standard level FETRev. 03 8 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

 7.1. Size:104K  philips
buk763r4-30.pdfpdf_icon

BUK763R1-60E

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

Другие MOSFET... BUK761R6-40E , BUK761R7-40E , BUK762R0-40E , BUK762R4-60E , BUK762R6-40E , BUK762R6-60E , BUK762R9-40E , BUK7631-100E , IRF630 , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , BUK764R0-40E , BUK764R2-80E , BUK764R4-60E , BUK765R0-100E , BUK765R3-40E .

History: MDS3653URH | HM4N65 | IXFN82N60Q3

 

 
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