BUK764R0-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK764R0-40E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 182 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 54 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 634 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: D2PAK

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BUK764R0-40E Datasheet (PDF)

..1. Size:210K nxp
buk764r0-40e.pdf

BUK764R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

5.1. Size:191K philips
buk764r0-75c.pdf

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

5.2. Size:101K philips
buk754r0-55b buk764r0-55b.pdf

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

5.3. Size:813K nxp
buk764r0-75c.pdf

5.4. Size:846K nxp
buk764r0-55b.pdf

BUK764R0-55BN-channel TrenchMOS standard level FETRev. 5 22 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

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