All MOSFET. BUK764R0-40E Datasheet

 

BUK764R0-40E Datasheet and Replacement


   Type Designator: BUK764R0-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 182 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 634 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: D2PAK
 

 BUK764R0-40E substitution

   - MOSFET ⓘ Cross-Reference Search

 

BUK764R0-40E Datasheet (PDF)

 ..1. Size:210K  nxp
buk764r0-40e.pdf pdf_icon

BUK764R0-40E

BUK764R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 5.1. Size:191K  philips
buk764r0-75c.pdf pdf_icon

BUK764R0-40E

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 5.2. Size:101K  philips
buk754r0-55b buk764r0-55b.pdf pdf_icon

BUK764R0-40E

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 5.3. Size:813K  nxp
buk764r0-75c.pdf pdf_icon

BUK764R0-40E

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

Datasheet: BUK762R6-40E , BUK762R6-60E , BUK762R9-40E , BUK7631-100E , BUK763R1-60E , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , P55NF06 , BUK764R2-80E , BUK764R4-60E , BUK765R0-100E , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E .

History: IXTP14N60P | BUK7626-100B | BUK7510-100B | MDIB6N70CTH | PSMN2R0-60ES | JCS4N70F | MDS1653URH

Keywords - BUK764R0-40E MOSFET datasheet

 BUK764R0-40E cross reference
 BUK764R0-40E equivalent finder
 BUK764R0-40E lookup
 BUK764R0-40E substitution
 BUK764R0-40E replacement

 

 
Back to Top

 


 
.