BUK764R0-40E. Аналоги и основные параметры
Наименование производителя: BUK764R0-40E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 182 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 634 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK764R0-40E
- подборⓘ MOSFET транзистора по параметрам
BUK764R0-40E даташит
buk764r0-40e.pdf
BUK764R0-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti
buk764r0-75c.pdf
BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
buk754r0-55b buk764r0-55b.pdf
BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l
buk764r0-75c.pdf
BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
Другие MOSFET... BUK762R6-40E , BUK762R6-60E , BUK762R9-40E , BUK7631-100E , BUK763R1-60E , BUK763R4-30 , BUK763R8-80E , BUK763R9-60E , IRF3710 , BUK764R2-80E , BUK764R4-60E , BUK765R0-100E , BUK765R3-40E , BUK766R0-60E , BUK768R1-100E , BUK768R1-40E , BUK768R3-60E .
History: BUK7105-40AIE | BUK664R8-75C | HM4826
History: BUK7105-40AIE | BUK664R8-75C | HM4826
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Список транзисторов
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