BUK7Y4R8-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7Y4R8-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 238 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 499 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Encapsulados: LFPAK56 POWER-SO8
Búsqueda de reemplazo de BUK7Y4R8-60E MOSFET
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BUK7Y4R8-60E datasheet
buk7y4r8-60e.pdf
BUK7Y4R8-60E N-channel 60 V, 4.8 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y4r4-40e.pdf
BUK7Y4R4-40E N-channel 40 V, 4.4 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y41-80e.pdf
BUK7Y41-80E N-channel 80 V, 41 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y43-60e.pdf
BUK7Y43-60E N-channel 60 V, 43 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
Otros transistores... BUK7Y25-60E , BUK7Y25-80E , BUK7Y29-40E , BUK7Y38-100E , BUK7Y3R5-40E , BUK7Y41-80E , BUK7Y43-60E , BUK7Y4R4-40E , 20N50 , BUK7Y59-60E , BUK7Y65-100E , BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E .
History: HM20N15A
History: HM20N15A
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