BUK7Y4R8-60E. Аналоги и основные параметры
Наименование производителя: BUK7Y4R8-60E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 238 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 499 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK7Y4R8-60E
- подборⓘ MOSFET транзистора по параметрам
BUK7Y4R8-60E даташит
buk7y4r8-60e.pdf
BUK7Y4R8-60E N-channel 60 V, 4.8 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y4r4-40e.pdf
BUK7Y4R4-40E N-channel 40 V, 4.4 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
buk7y41-80e.pdf
BUK7Y41-80E N-channel 80 V, 41 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y43-60e.pdf
BUK7Y43-60E N-channel 60 V, 43 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
Другие MOSFET... BUK7Y25-60E , BUK7Y25-80E , BUK7Y29-40E , BUK7Y38-100E , BUK7Y3R5-40E , BUK7Y41-80E , BUK7Y43-60E , BUK7Y4R4-40E , 20N50 , BUK7Y59-60E , BUK7Y65-100E , BUK7Y6R0-60E , BUK7Y72-80E , BUK7Y7R2-60E , BUK7Y7R6-40E , BUK7Y7R8-80E , BUK7Y8R7-60E .
History: BUK954R8-60E
History: BUK954R8-60E
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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