BUK7Y4R8-60E MOSFET Datasheet: N-Ch, 60V, 100A. Full specification with pinout and replacement list

BUK7Y4R8-60E Specs and Replacement

Type Designator: BUK7Y4R8-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 499 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: LFPAK56 POWER-SO8

BUK7Y4R8-60E substitution

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BUK7Y4R8-60E datasheet

..1. Size:296K nxp
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buk7y43-60e.pdf pdf_icon

BUK7Y43-60E N-channel 60 V, 43 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒

Detailed specifications: BUK7Y25-60E, BUK7Y25-80E, BUK7Y29-40E, BUK7Y38-100E, BUK7Y3R5-40E, BUK7Y41-80E, BUK7Y43-60E, BUK7Y4R4-40E, 20N50, BUK7Y59-60E, BUK7Y65-100E, BUK7Y6R0-60E, BUK7Y72-80E, BUK7Y7R2-60E, BUK7Y7R6-40E, BUK7Y7R8-80E, BUK7Y8R7-60E